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| EML12 / UML12N Transistors General purpose transistor (isolated transistor and diode) EML12 / UML12N 2SC4617and RB521S-30 are housed independently in a EMT5 or UMT5 package. Applications DC / DC converter Motor driver External dimensions (Unit : mm) EMT5 1.6 0.5 1pin mark Features 1) Tr : Low VCE(sat) Di : Low VF 2) Small package 1.0 0.5 0.5 (5) (4) 1.6 1.2 (1) (2) (3) 0.22 0.13 Structure NPN Silicon epitaxial planar transistor Schottky barrier diode Each lead has same dimensions Abbreviated symbol : L12 ROHM : EMT5 The following characteristics apply to both Di1 and Tr2. UMT5 2.0 1.3 0.65 0.65 0.9 0.7 Equivalent circuit (EML12 / UML12N) (5) (4) (5) (4) 1.25 Di1 Tr2 0.2 0.15 Each lead has same dimensions (1) (2) (3) Abbreviated symbol : L12 ROHM : UMT5 EIAJ : SC-88A Packaging specifications Type Package Marking Code Basic ordering unit (pieces) EML12 EMT5 L12 T2R 8000 UML12N UMT5 L12 TR 3000 Rev.A 0.1Min. 1pin mark (1) (2) (3) 2.1 1/4 EML12 / UML12N Transistors Absolute maximum ratings (Ta=25C) Di1 Parameter Symbol IO Average revtified forward current Forward current surge peak (60Hz, 1) IFSM VR Reverse voltage (DC) Tj Junction temperature Limits 200 1 30 125 Unit mA A V C Tr2 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Symbol VCBO VCEO VEBO IC PD Tj Limits 60 50 7 150 120 150 Unit V V V mA mW C Each terminal mount on a recommended. Di1 / DTr2 Parameter Power dissipation Storage temperature Symbol Pd Tstg Limits 150 -55 to +125 Unit mW C Each terminal mount on a recommended. Electrical characteristics (Ta=25C) Di1 Parameter Forward voltage Reverse current Symbol VF IR Min. - - Typ. 0.40 4.0 Max. 0.50 30 Unit V A Conditions IF=200mA VR=10V Tr2 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE fT Cob 60 50 7 - - - 180 - - - - - - - - - 180 2 - - - 0.1 0.1 0.4 390 - 3.5 V V V A A V - MHz PF IC=50A IC=1mA IE=50A VCB=60V VEB=7V IC/IB=50mA/5mA VCE=6V, IC=1mA VCE=12V, IE=-2mA, f=100MHz VCB=12V, IE=0A, f=1MHz Conditions Rev.A 2/4 EML12 / UML12N Transistors Electrical characteristic curves Di1 1000 100000 100 Ta=125 Ta=75 Ta=25 Ta=-25 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 10 Ta=75 1 0.1 0.01 1000 100 10 1 0.1 0.01 Ta=-25 Ta=25 0.001 0 100 200 300 400 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 500 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 Ta=125 10000 10 0 10 20 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 30 1 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 Tr2 50 COLLECTOR CURRENT : IC (mA) VCE=6V COLLECTOR CURRENT : IC (mA) 100 Ta=25C COLLECTOR CURRENT : IC (mA) 20 10 5 80 0.50mA mA 0.45 A m 0.40 0.35mA 0.30mA 10 Ta=25C 30A 27A 8 24A 21A 6 Ta=100C 25C -55C 60 0.25mA 0.20mA 18A 2 1 15A 4 40 0.15mA 12A 9A 2 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.10mA 20 6A 0.05mA 3A 0 0 0 0 0.4 0.8 1.2 1.6 IB=0A 2.0 IB=0A 4 8 12 16 20 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics ( I ) Fig.3 Grounded emitter output characteristics ( II ) 500 500 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Ta=25C Ta=100C VCE=5V 0.5 Ta=25C DC CURRENT GAIN : hFE 200 VCE=5V 3V 1V DC CURRENT GAIN : hFE 200 25C -55C 0.2 100 100 0.1 IC/IB=50 0.05 50 50 20 10 20 20 0.02 0.01 0.2 10 0.2 0.5 1 2 5 10 20 50 100 200 10 0.2 0.5 1 2 5 10 20 50 100 200 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( I ) Fig.5 DC current gain vs. collector current ( II ) Fig.6 Collector-emitter saturation voltage vs. collector current Rev.A 3/4 EML12 / UML12N Transistors COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 0.5 0.5 Ta=25C IC/IB=10 0.5 IC/IB=50 0.2 0.2 0.2 0.1 0.05 0.1 0.05 IC/IB=50 20 10 0.1 0.05 Ta=100C 25C -55C Ta=100C 25C -55C 0.02 0.02 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 0.01 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( I ) Fig.8 Collector-emitter saturation voltage vs. collector current ( II ) Fig.9 Collector-emitter saturation voltage vs. collector current ( III ) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) TRANSITION FREQUENCY : fT (MHz) 500 Ta=25C VCE=6V 20 BASE COLLECTOR TIME CONSTANT : Cc rbb' (ps) 10 Cib Ta=25C f=1MHz IE=0A IC=0A 200 Ta=25C f=32MHZ VCB=6V 100 200 5 50 100 2 Co 20 b 50 -0.5 1 0.2 0.5 1 2 5 10 20 50 10 -0.2 -0.5 -1 -2 -5 -10 -1 -2 -5 -10 -20 -50 -100 EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) EMITTER CURRENT : IE (mA) Fig.10 Gain bandwidth product vs. emitter current Fig.11 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Fig.12 Base-collector time constant vs. emitter current Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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